Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

1. The effect of electron beam on nanocrystallites size, strain and structural parameters of the silicon carbide nanopowder

   M. Yu. Tashmetov, B. A. Abdurakhimov, M.N. Mirzayev +1

   МақолаAdvanced ceramic materials synthesisInternational Journal of Modern Physics B20195 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199232

2. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

   Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 иқтибос

   ABIABI:AkademIndex/openalex/2013.article.000107