Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide

1. The effect of electron beam on nanocrystallites size, strain and structural parameters of the silicon carbide nanopowder

   M. Yu. Tashmetov, B. A. Abdurakhimov, M.N. Mirzayev +1

   МақолаAdvanced ceramic materials synthesisInternational Journal of Modern Physics B20195 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199232

2. Radiation Hard Devices Based on SiC

   Evgenia V. Kalinina, Anatoly M. Strel’chuk, A. А. Lebedev +3

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20060 иқтибос

   ABIABI:AkademIndex/openalex/2006.article.000250