Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Crystal growth of manganese silicide, MnSi?1.73 and semiconducting properties of Mn15Si26

1. Formation of thin Crsi ₂ films by the solid-phase ion-plasma method and their thermoelectric properties

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   ABIABI:AkademIndex/openalex/2024.article.000742

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   T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

   МақолаSemiconductor materials and interfaces20051 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609626