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13 та иш

Иш: OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

  1. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаSemiconductor materials and interfacesEast European Journal of Physics202410 иқтибос
    ABI

  2. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    МақолаSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 иқтибос
    ABI

  3. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  4. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 иқтибос
    ABI

  5. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  6. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    МақолаAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 иқтибос
    ABI

  7. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20253 иқтибос
    ABI

  8. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20252 иқтибос
    ABI

  9. Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

    S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov

    МақолаAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics20252 иқтибос
    ABI

  10. Temperature Response Curve of Silicon Diode Temperature Sensors

    Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

    МақолаAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics20250 иқтибос
    ABI

  11. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20260 иқтибос
    ABI

  12. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    МақолаSemiconductor materials and interfacesJournal of Electronic Materials20260 иқтибос
    ABI

  13. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    МақолаSilicon and Solar Cell TechnologiesLow Temperature Physics20260 иқтибос
    ABI