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Иш: The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

X-Ray Structural Investigations Of n-Si<Pt> Irradiated with Protons
Sharifa B. Utamuradova, А. В. Станчик, Dilmurod A. Rakhmanov
МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос
ABI
Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films
Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3
МақолаAdvanced Semiconductor Detectors and MaterialsApplied Physics20218 иқтибос
ABI
Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure
N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova
МақолаSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 иқтибос
ABI
15
Gertrudis Gómez de Avellaneda
Боб20226 иқтибос
ABI
Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉
С. З. Зайнабидинов, K. N. Musaev, N. A. Turgunov +1
Мақола20126 иқтибос
ABI
Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging
Chang Sun, Hieu T. Nguyen, Fiacre Rougieux +1
Мақола20163 иқтибос
ABI
Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals
N. A. Turgunov
МақолаSilicon and Solar Cell TechnologiesInorganic Materials20183 иқтибос
ABI
Formation and kinetics of decomposition of impurity nickel precipitates in silicon
С. З. Зайнабидинов, N. A. Turgunov
Мақола20042 иқтибос
ABI
Characterization of Cu and Ni Precipitates in n– and p-type Czochralski-grown Silicon by Photoluminescence
Chang Sun, Hieu T. Nguyen, Fiacre Rougieux +1
Мақола20162 иқтибос
ABI
The effect of a heated electron on the VAX of a tunnel diode
G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1
МақолаGaN-based semiconductor devices and materialsAIP conference proceedings20232 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI