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Иш: Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

1. Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

   Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 иқтибос

   ABIABI:AkademIndex/openalex/2013.article.000107