Ушбу иш иқтибос қилган ишлар

3 та иш

Иш: Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

1. Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

   M. Ikeda, Tomokatsu Hayakawa, Shin-ichi Yamagiwa +2

   Мақола19792 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.381991

2. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.381992

3. Temperature coefficient of the energy gap of β-silicon carbide

   Richard Dalven

   Мақола19652 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.381995