Ушбу ишга иқтибос қилган ишлар

5 та иш

Иш: Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

1. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

   B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

   МақолаMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001205

2. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20243 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.001804

3. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

   Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001522

4. Ferromagnetic Properties of Silicon Doped Manganese Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, Levent Trabzon +4

   МақолаZnO doping and propertiesSurface Engineering and Applied Electrochemistry20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.005445

5. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   МақолаThermal properties of materialsAIP conference proceedings20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009659