Ушбу ишга иқтибос қилган ишлар

6 та иш

Иш: Dopant microassociation mechanisms in Si〈Mn〉 and Si〈Ni〉

1. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

   N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.279528

2. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20243 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.001804

3. Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

   N. A. Turgunov

   МақолаSilicon and Solar Cell TechnologiesInorganic Materials20183 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.385119

4. Study of the Distribution Profile for Nickel Implanted in Silicon and the Effect of Annealing on the Structure

   Б. Э. Эгамбердиев, A. A. Akbarov

   МақолаSilicon and Solar Cell TechnologiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.392899

5. Electrical Properties of Silicon Doped with Manganese via High-Temperature Diffusion

   M. K. Bakhadirkhanov, Х. М. Илиев, M. O. Tursunov +3

   МақолаSilicon Nanostructures and PhotoluminescenceInorganic Materials20211 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.419058

6. Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals

   N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1

   МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.003369