Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source

1. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties

   А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

   МақолаChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000686

2. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

   С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

   МақолаSemiconductor materials and interfacesApplied Solar Energy20192 иқтибос

   ABIABI:AkademIndex/openalex/2019.article.000285

3. Influence of Germanium and Zinc Selenium Nanocrystals on the Photoelectric Properties of the n-GaAs – p-(GaAs)0.69(Ge2)0.17(ZnSe)0.14 Heterostructure

   С. З. Зайнабидинов, Akramjon Y. Boboev, Jakhongir N. Usmonov

   МақолаSemiconductor materials and interfacesAlternative Energy and Ecology (ISJAEE)20191 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.386220

4. Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y

   Akramjon Y. Boboev

   МақолаSemiconductor Quantum Structures and DevicesEast European Journal of Physics20241 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.467189