Ушбу ишга иқтибос қилган ишлар

5 та иш

Иш: Physical origin of negative differential resistance in SOI transistors

1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit Design20216 иқтибос

   ABIABI:AkademIndex/openalex/2021.preprint.000003

2. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   МақолаSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.511885

3. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   МақолаSemiconductor materials and devices20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.001950

4. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

   A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

   Мақола2D Materials and ApplicationsApplied Sciences20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.439504

5. Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

   M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1

   МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009026