Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

1. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

   I. G. Atabaev, Kh. N. Juraev, V. A. Pak

   МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390748

2. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

   I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000197