Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: The Method of Solid State Impurity Diffusion and Doping In 4H-SiC

1. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

   I. G. Atabaev, Kh. N. Juraev, V. A. Pak

   МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390748

2. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

   I. G. Atabaev, Kh. N. Juraev

   МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390749

3. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

   I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000197