Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

17 та иш

Иш: Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

  1. Physics of Semiconductor Devices

    Simon M. Sze, Kwok K. Ng

    Китоб200633 иқтибос
    ABI

  2. Effect of temperature on the thermodynamic density of states in a quantizing magnetic field

    G. Gulyamov, У. И. Эркабоев, N. Yu. Sharibaev

    МақолаQuantum and electron transport phenomenaSemiconductors201416 иқтибос
    ABI

  3. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Мақола199810 иқтибос
    ABI

  4. Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

    Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3

    МақолаAdvanced Semiconductor Detectors and MaterialsApplied Physics20218 иқтибос
    ABI

  5. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

    N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

    МақолаSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 иқтибос
    ABI

  6. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

    G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

    МақолаSilicon and Solar Cell TechnologiesAIP conference proceedings20235 иқтибос
    ABI

  7. Theory of Tunneling

    E. O. Kane

    Мақола19614 иқтибос
    ABI

  8. Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

    N. A. Turgunov

    МақолаSilicon and Solar Cell TechnologiesInorganic Materials20183 иқтибос
    ABI

  9. The multivalued current–voltage characteristics in the tunnel diodes

    К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1

    Мақола20083 иқтибос
    ABI

  10. Excess Tunnel Current in Silicon Esaki Junctions

    A. G. Chynoweth, W. L. Feldmann, R. A. Logan

    Мақола19613 иқтибос
    ABI

  11. 431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

    Tyler A. Growden, Weidong Zhang, E. R. Brown +5

    Мақола20183 иқтибос
    ABI

  12. Tunnel junction <i>I</i>(<i>V</i>) characteristics: Review and a new model for p-n homojunctions

    Nelly Moulin, Mohamed Amara, Fabien Mandorlo +1

    Шарҳ мақола20193 иқтибос
    ABI

  13. Changes in diodes with a p-n-transition under the influence of microwave radiation

    G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1

    МақолаSemiconductor Quantum Structures and DevicesAIP conference proceedings20233 иқтибос
    ABI

  14. Negative Differential Resistance Devices and Circuits

    Paul R. Berger, A. Ramesh

    Боб20112 иқтибос
    ABI

  15. Simple Method for Calculating the Tunneling Current of an Esaki Diode

    J. Karlovský

    Мақола19622 иқтибос
    ABI

  16. Franz-Keldysh effect in semiconductor built-in fields: Doping concentration and space charge region characterization

    Yury Turkulets, Ilan Shalish

    Мақола20182 иқтибос
    ABI

  17. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI