Ушбу иш иқтибос қилган ишлар

3 та иш

Иш: Influence of GaAs molecules on the photosensitivity of pSi–n(GaSb)1–x (Si2) x and nGaAs–p(InSb)1–x (Sn2) x heterostructures

1. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

   Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

   МақолаSemiconductor materials and interfacesSemiconductors20098 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.400552

2. A review of progress in thermophotovoltaic generation of electricityfnafnaI began writing this paper immediately after the Third nrel Conference on Thermophotovoltaic Genertion of materials, devices, and systems; substantial gains in fundamental understanding and performance of the quaternary alloy GaInAsSb; the introduction of new radiator concepts; and more attention being paid to modeling of both real and conceptual systems. There was also further evidence of interest in non-military applications, particularly from the European and Japanese attendees.

   T. J. Coutts

   Шарҳ мақола19994 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.496895

3. Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

   А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

   МақолаSemiconductor materials and interfacesTechnical Physics Letters20073 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.545500