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Иш: Codiffusion of Gallium and Phosphorus Atoms in Silicon

Silicon with binary elementary cells as a novel class of materials for future photoenergetics
М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1
МақолаSemiconductor materials and interfacesApplied Solar Energy201513 иқтибос
ABI
Silicon with Magnetic Nanoclusters of Manganese Atoms as a New Ferromagnetic Material
М. К. Бахадырханов, Х. М. Илиев, Г. Х. Мавлонов +3
МақолаSemiconductor materials and interfacesTechnical Physics201910 иқтибос
ABI
Сарлавҳасиз
Бошқа9 иқтибос
ABI
Formation of Heterostructures of GaP/Si Photoconverters by the Combined Method of MOVPE and PEALD
A V Uvarov, A I Baranov, Ekaterina Vyacheslavova +7
Мақола20213 иқтибос
ABI
Minority-charge-carrier mobility at low injection level in semiconductors
L. I. Pomortseva
Мақола20112 иқтибос
ABI
Diffusion of phosphorus in arsenic and boron doped silicon
Fred Wittel, Scott T. Dunham
Мақола19952 иқтибос
ABI
Redistribution of phosphorus implanted into silicon doped heavily with boron
E. G. Tishkovskiǐ, V.I. Obodnikov, A. A. Taskin +2
Мақола20002 иқтибос
ABI
A model of high-and low-temperature phosphorus diffusion in silicon by a dual pair mechanism
О. В. Александров
Мақола20012 иқтибос
ABI
Diffusion of boron and phosphorus in silicon during high-temperature ion implantation
G. V. Gadiyak
Мақола19972 иқтибос
ABI
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
Kevin Chen, Rehan Kapadia, Audrey Harker +19
Мақола20162 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Drift mobility of carriers in porous silicon
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev +1
МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20011 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI