Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Selective doping of 4H–SiC by codiffusion of aluminum and boron

1. Oxide film assisted dopant diffusion in silicon carbide

   Chin‐Che Tin, Suwan Mendis, Kerlit Chew +6

   МақолаSilicon and Solar Cell TechnologiesThin Solid Films20105 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390738

2. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

   I. G. Atabaev, Kh. N. Juraev, V. A. Pak

   МақолаSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390748