Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Physicochemical interaction at the MnSi1.71–1.75/Mo interface

1. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   МақолаSemiconductor materials and interfacesNanotechnologies in Russia20167 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079735

2. On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

   А.С. Рысбаев, M. T. Normurodov, J. B. Khujaniyozov +2

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20211 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.297468