Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

1. Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

   A. É. Atamuratov, Ahmed Yusupov, Zamira Atamuratova +2

   МақолаSemiconductor materials and devicesApplied Sciences20203 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.000900

2. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

   A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

   МақолаSemiconductor materials and devices20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.011220

3. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009018