Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Sputtered gold as an effective Schottky gate for strained Si∕SiGe nanostructures

1. Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

   N. A. Matchanov

   МақолаSemiconductor materials and interfacesTechnical Physics20080 иқтибос

   ABIABI:AkademIndex/openalex/2008.article.000326

2. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

   I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

   МақолаSemiconductor materials and devicesSemiconductors20100 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000173