Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

1. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

   Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 иқтибос

   ABIABI:AkademIndex/openalex/2003.article.000128

2. 4H-SiC High Temperature Spectrometers

   Evgenia V. Kalinina, N. B. Strokan, Alexander M. Ivanov +5

   МақолаSilicon Carbide Semiconductor TechnologiesMaterials science forum20070 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000197