Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy Pair

1. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   МақолаThin-Film Transistor TechnologiesMRS Proceedings19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000275

2. New Tight-Binding Method for Simulation of Defect Configurations, Creation and Diffusion Mechanisms in Solids: Application to Silicon

   Zokirkhon M. Khakimov

   МақолаSilicon and Solar Cell TechnologiesMRS Proceedings19980 иқтибос

   ABIABI:AkademIndex/openalex/1998.article.000320

3. Formation of radiation defects in silicon structures under low-intensity electron irradiation

   Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

   МақолаSemiconductor materials and interfacesSemiconductor Science and Technology20010 иқтибос

   ABIABI:AkademIndex/openalex/2001.article.000146