Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Influence of Hydrostatic Pressure and Temperature on the Deep Donor Levels of Sulfur in Silicon

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   МақолаLaser Design and ApplicationsSemiconductors20011 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609364

2. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

   G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

   МақолаSemiconductor materials and interfacesTechnical Physics19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000202

3. Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters

   Yu. A. Astrov, L. М. Portsel, А. N. Lodygin +2

   МақолаSpectroscopy and Laser ApplicationsDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 иқтибос

   ABIABI:AkademIndex/openalex/2005.article.000174