Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Dotierungseigenschaften von Rhodium und Iridium in Silizium

1. On several regularities of deep levels of d-impurities in silicon

   Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19952 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.408791

2. Mechanisms for thermal stability of the electrophysical properties of overcompensated n-Si〈B, S〉

   Marat S. Yunusov, M. Kаrimov, P. A. Khalikov

   МақолаSemiconductor materials and interfacesTechnical Physics Letters19991 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.279516