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Ушбу иш иқтибос қилган ишлар

11 та иш

Иш: Possibility of forming continuous solid solutions of silicon and germanium with compounds with defective diamond-like structures

  1. Сарлавҳасиз

    Бошқа1117 иқтибос
    ABI

  2. Efficiency improvements of silicon solar cells by the impurity photovoltaic effect

    Mark Keevers, Martin A. Green

    Мақола199422 иқтибос
    ABI

  3. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

    A. Ĺuque, Antonio Martı́

    Мақола199720 иқтибос
    ABI

  4. The impurity photovoltaic (IPV) effect in wide‐bandgap semiconductors: an opportunity for very‐high‐efficiency solar cells?

    G. Beaucarne, Andrew S. Brown, Mark Keevers +2

    Мақола200215 иқтибос
    ABI

  5. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, А. С. Саидов

    МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20043 иқтибос
    ABI

  6. Preparation of nonequilibrium solid solutions of (GaAs)1−<i>x</i>Si<i>x</i>

    A. J. Noreika, M. H. Francombe

    Мақола19743 иқтибос
    ABI

  7. Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

    А. С. Саидов, A. Sh. Razzakov, D. V. Saparov

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20022 иқтибос
    ABI

  8. Growth of single-crystal metastable semiconducting (GaSb)1−<i>x</i>Ge<i>x</i> films

    Ken Cadien, A. H. Eltoukhy, J. E. Greene

    Мақола19812 иқтибос
    ABI

  9. Growth and optical properties of single-crystal metastable (GaAs) <sub> 1− <i>x</i> </sub> Ge <sub> <i>x</i> </sub> alloys

    Scott A. Barnett, Mark Ray, A. Lastras +4

    Мақола19822 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI