Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Highly excited states of donor centres in silicon

1. An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation

   V. T. Tulanov, Kh. B. Siyabekov, A.Sh. Davletova +1

   МақолаLaser Design and ApplicationsSemiconductors20011 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.609364

2. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

   G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

   МақолаSemiconductor materials and interfacesTechnical Physics19970 иқтибос

   ABIABI:AkademIndex/openalex/1997.article.000202