Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: RTS amplitudes in decananometer MOSFETs: 3-D simulation study

1. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   БобSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 иқтибос

   ABIABI:AkademIndex/openalex/2013.chapter.000013

2. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   МақолаSemiconductor materials and devicesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009018