Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: The interfacial reaction of Ni with (111)Ge, (100)Si0.75Ge0.25 and (100)Si at 400 °C

1. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

   I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

   МақолаSemiconductor materials and interfacesSemiconductors20100 иқтибос

   ABIABI:AkademIndex/openalex/2010.article.000362

2. Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals

   N. A. Matchanov, K. A. Bobojonov

   МақолаSemiconductor materials and interfacesApplied Solar Energy20220 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.010466