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1. Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods

   Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2

   МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20070 иқтибос

   ABIABI:AkademIndex/openalex/2007.article.000340