Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: First-principles study of radiation defects in silicon

1. Investigations of the formation of nanosized objects in manganese implanted silicon single crystals by the methods of Raman scattering of light and atomic force microscopy

   Э. У. Арзикулов, F. Salakhitdinov, F Kholmurodov +1

   МақолаIon-surface interactions and analysisJournal of Physics Conference Series20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.010504

2. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009030

3. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   МақолаSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.010369