Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

1. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   МақолаSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.009030

2. Impedance spectra of rhodium-doped silicon irradiated with alpha particles

   Sharifa B. Utamuradova, D.A. Rakhmanov, A.S. Doroshkevich +3

   МақолаSilicon and Solar Cell TechnologiesRadiation Physics and Chemistry20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.010369

3. Raman Spectoroscopy of Silicon Single Crystals, Doped with Palladium and Irradiated by GammaRays

   Sharifa B. Utamuradova, Dilmurod A. Rakhmanov, A.S. Abiyev

   МақолаSilicon and Solar Cell TechnologiesJournal of Ovonic Research20260 иқтибос

   ABIABI:AkademIndex/openalex/2026.article.010786