Akihisa Matsuda

6 ta ish

Fizika-Texnika Instituti

1. Gap-State Profiles of a-Si: H Deduced from Below-Gap Optical Absorption

   Satoshi Yamasaki, Hidetoshi Oheda, Akihisa Matsuda +2

   Maqola19823 iqtibos

   ABIABI:AkademIndex/2026.other.277847

2. Deposition and extensive light soaking of highly pure hydrogenated amorphous silicon

   Toshihiro Kamei, Nobuhiro Hata, Akihisa Matsuda +5

   Maqola19962 iqtibos

   ABIABI:AkademIndex/2026.other.651610

3. Correlation Between Surface Morphology and Lattice Orientation of Microcrystalline Silicon

   Michio Kondo, T. Nishimiya, K. Saitoh +2

   MaqolaThin-Film Transistor TechnologiesMRS Proceedings19970 iqtibos

   ABIABI:AkademIndex/1997.article.000053

4. Light-Induced Degradation Effects in a-Si:H Observed by Raman Scattering Measurements

   Paul Stradins, Michio Kondo, Nobuhiro Hata +1

   MaqolaThin-Film Transistor TechnologiesMRS Proceedings19980 iqtibos

   ABIABI:AkademIndex/1998.article.000157

5. A Study of the Time Scales of Processes Responsible for the Light-induced Degradation of a-Si:H by Pulse Illumination

   Paul Stradins, Michio Kondo, Akihisa Matsuda

   MaqolaThin-Film Transistor TechnologiesMRS Proceedings20000 iqtibos

   ABIABI:AkademIndex/2000.article.000161

6. On the Role of Charged Defect States and Deep Traps in the Photocarrier Drift and Diffusion in a-Si:H

   Paul Stradins, Akihisa Matsuda

   MaqolaThin-Film Transistor TechnologiesMRS Proceedings20000 iqtibos

   ABIABI:AkademIndex/2000.article.000287