J. Pezoldt

5 ta ish

Fizika-Texnika Instituti

1. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

   Cedric Nanmeni Bondja, Zhansong Geng, R. Granzner +2

   Maqola20162 iqtibos

   ABIABI:AkademIndex/2026.other.511875

2. Investigation of the nucleation and growth of SiC nanostructures on Si

   F. Scharmann, P. Maslarski, W. Attenberger +4

   Maqola20002 iqtibos

   ABIABI:AkademIndex/2026.other.604181

3. Formation of Buried Layers of (SiC)_1-x(AINT)_x in 6H-SiC Using Ion-Beam Synthesis

   R.A. Yankov, N. Hatzopoulos, W. Fukarek +4

   Maqola19962 iqtibos

   ABIABI:AkademIndex/2026.other.608615

4. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

   R.A. Yankov, M. Voelskow, W. Kreissig +6

   MaqolaSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000097

5. Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions

   D. V. Kulikov, Yu. V. Trushin, R.A. Yankov +2

   MaqolaSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000168