R. Granzner

4 ta ish

Technische Universität Ilmenau

1. MOSFET scaling: Impact of two-dimensional channel materials

   R. Granzner, Zhansong Geng, W. Kinberger +1

   Maqola20164 iqtibos

   ABIABI:AkademIndex/2026.other.511879

2. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

   Cedric Nanmeni Bondja, Zhansong Geng, R. Granzner +2

   Maqola20162 iqtibos

   ABIABI:AkademIndex/2026.other.511875

3. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

   A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 iqtibos

   ABIABI:AkademIndex/2026.other.541483

4. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   BobSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 iqtibos

   ABIABI:AkademIndex/2013.chapter.000013