V. A. Soloviev

2 ta ish

Russian Academy of Sciences

1. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

   Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos

   ABIABI:AkademIndex/2026.other.381992

2. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

   A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos

   ABIABI:AkademIndex/2002.article.000201