Rositza Yakimova

3 ta ish

Linköping University

1. Radiation Hardness of Silicon Carbide

   A. А. Lebedev, Vitalii V. Kozlovski, N. B. Strokan +4

   MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000098

2. p-Type 6H-SiC Films in the Creation of Triode Structures for Low Ionization Radiation

   Alexander M. Ivanov, N. B. Strokan, Denis Davydov +4

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20030 iqtibos

   ABIABI:AkademIndex/2003.article.000282

3. Carrier Removal in Electron Irradiated 4H and 6H SiC

   M. Mikelsen, Ulrike Großner, J. H. Bleka +6

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20080 iqtibos

   ABIABI:AkademIndex/2008.article.000120