Н. К. Полетаев

2 ta ish

Fizika-Texnika Instituti

1. p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical Characterization

   A. А. Lebedev, Anatoly M. Strel’chuk, D. V. Davydov +5

   MaqolaOAOchiq kirishSilicon Carbide Semiconductor TechnologiesMaterials science forum20020 iqtibos

   ABIABI:AkademIndex/2002.article.000201

2. The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals

   М. М. Мездрогина, E. Yu. Danilevskii, Roman Kuzmin +6

   MaqolaZnO doping and propertiesSemiconductors20100 iqtibos

   ABIABI:AkademIndex/2010.article.000126