Gurdial Blugan

3 ta ish

Swiss Federal Laboratories for Materials Science and Technology

1. Formation of Highly Conductive Interfaces in Crystalline Ionic Liquid-Gated Unipolar MoTe2/h-BN Field-Effect Transistor

   Kamoladdin Saidov, Jamoliddin Razzokov, Odilkhuja Parpiev +4

   MaqolaOAOchiq kirishAdvanced Memory and Neural ComputingNanomaterials20231 iqtibos

   ABIABI:AkademIndex/2023.article.004001

2. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

   MaqolaOAOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures20240 iqtibos

   ABIABI:AkademIndex/2024.article.002170

3. Development of Transition Metal Dichalcogenides (TMDCs) Field-Effect Transistors via Reconfigurable Ion Gating with BMIM-BF4 (1-butyl-3-methylimidazolium Tetrafluoroborate)

   Kamoladdin Saidov, Gurdial Blugan, Olim Ruzimuradov

   BobElectronic and Structural Properties of Oxides20240 iqtibos

   ABIABI:AkademIndex/2024.chapter.000266