Sh. A. Yusupova

2 ta ish

Department of Electrical and Computer Engineering, Michigan State University, East Lansing, USA

1. Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

   I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20101 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000289

2. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

   I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000211