Nikolay Abrosimov

2 ta ish

Institute of Crystal Growth, 12489, Berlin, Germany

1. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

   I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

   MaqolaSemiconductor materials and interfacesTechnical Physics Letters20080 iqtibos

   ABIABI:AkademIndex/openalex/2008.article.000211

2. Hyperbolic and Euclidean Structures on Cone-Manifolds over Trefoil Knot with a Bridge

   Nikolay Abrosimov, L. A. Grunwald, Alexander Mednykh +2

   MaqolaElasticity and Wave PropagationSiberian Mathematical Journal20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.005641