M. U. Kalanov

28 ta ish

Institute of Nuclear Physics, Uzbekistan Academy of Sciences

1. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

   A.S. Saidov, M. U. Kalanov, D. V. Saparov +4

   MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibos

   ABIABI:AkademIndex/openalex/2024.article.005519

2. Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal

   M. U. Kalanov, I. I. Sadikov, Sh. R. Malikov +5

   MaqolaSilicon and Solar Cell TechnologiesSilicon20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.002912

3. Growing Perfect Single-Crystal Epitaxial Films of (Si<sub>2</sub>)<sub>1-x</sub>(GaN)<sub>x</sub> Solid Solutions on Si (111) Substrates from the Liquid Phase

   A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +5

   MaqolaGaN-based semiconductor devices and materialsActa Physica Polonica A20250 iqtibos

   ABIABI:AkademIndex/openalex/2025.article.007804