Ushbu ishga iqtibos qilgan ishlar

9 ta ish

Ish: Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

1. Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

   M. K. Bakhadyrhanov, U. X. Sodikov, D. Melibayev +4

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesJournal of Materials Science and Chemical Engineering20185 iqtibos

   ABIABI:AkademIndex/2026.other.070878

2. Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

   Н. Ф. Зикриллаев, K. S. Ayupov, Manzura M. Shoabdirahimova +4

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20234 iqtibos

   ABIABI:AkademIndex/2023.article.001522

3. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   MaqolaOAOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology20243 iqtibos

   ABIABI:AkademIndex/2024.article.001804

4. Self-Oscillatory Processes in Silicon, Problems and Prospects for Research, and Their Application in Electronics

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, K. S. Ayupov +2

   MaqolaSemiconductor Quantum Structures and DevicesSurface Engineering and Applied Electrochemistry20243 iqtibos

   ABIABI:AkademIndex/2026.other.441311

5. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

   М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

   MaqolaChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 iqtibos

   ABIABI:AkademIndex/2007.article.000255

6. Self-Oscillating Processes in Silicon, Problems and Prospects of Research and Their Application in Electronics

   N. F. Zikrillaeva, M. M. Shoabdurakhimova, K. S. Ayupov +2

   MaqolaOAOchiq kirish20230 iqtibos

   ABIABI:AkademIndex/2023.article.029486

7. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

   Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 iqtibos

   ABIABI:AkademIndex/2024.article.008623

8. Hybrid Secondary Structure of Manganese and Sulfur in Silicon

   Sharifa B. Utamuradova, A. Sh. Mavlyanov, Sh. A. Sobirova +1

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20250 iqtibos

   ABIABI:AkademIndex/2025.article.009268

9. Obtaining Silicon Specimens with Different Crystallographic Orientations by Diffusion Doping with Manganese Atoms

   N. F. Zikrillaev, Х. М. Илиев, А. А. Сатторов +3

   Maqola20260 iqtibos

   ABIABI:AkademIndex/2026.article.053431