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15 ta ish

Ish: The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Maqola201112 iqtibos
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Maqola20127 iqtibos
    ABI

  3. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Maqola20117 iqtibos
    ABI

  4. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos
    ABI

  5. Quantum corrections in the simulation of decanano MOSFETs

    Asen Asenov, A. R. Brown, J.R. Watling

    Maqola20034 iqtibos
    ABI

  6. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

    Ming-Long Fan, Shao‐Yu Yang, Vita Pi‐Ho Hu +3

    Maqola20144 iqtibos
    ABI

  7. RTN distribution comparison for bulk, FDSOI and FinFETs devices

    Louis Gerrer, Salvatore Amoroso, Razaidi Hussin +1

    Maqola20143 iqtibos
    ABI

  8. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

    A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

    MaqolaOchiq kirishSemiconductor materials and devicesResults in Physics20183 iqtibos
    ABI

  9. Anomalous Behavior of Lateral C–V Characteristic of an MNOS Transistor with an Embedded Local Charge in the Nitride Layer

    Zamira Atamuratova, А. Yusupov, B. O. Khalikberdiev +1

    MaqolaSemiconductor materials and devicesTechnical Physics20193 iqtibos
    ABI

  10. Double-gate junctionless transistor model including short-channel effects

    Bruna Cardoso Paz, Fernando Avila Herrera, A. Cerdeira +1

    Maqola20152 iqtibos
    ABI

  11. Ultralow-Power Design in Near-Threshold Region

    Dejan Marković, C.C. Wang, Louis P. Alarcón +2

    Maqola20102 iqtibos
    ABI

  12. Random telegraph-signal noise in junctionless transistors

    A. N. Nazarov, Isabelle Ferain, Nima Dehdashti Akhavan +3

    Maqola20112 iqtibos
    ABI

  13. Performance optimization of nanoscale junctionless transistors through varying device design parameters for ultra-low power logic applications

    Debapriya Basu Roy, Abhijit Biswas

    Maqola20162 iqtibos
    ABI

  14. Modeling Short-Channel Effects in Asymmetric Junctionless MOSFETs With Underlap

    Nivedita Jaiswal, Abhinav Kranti

    Maqola20182 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa2 iqtibos
    ABI