Ushbu ish iqtibos qilgan ishlar

6 ta ish

Ish: Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

1. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

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2. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

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   ABIABI:AkademIndex/2013.article.000105

3. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

   Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

   MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos

   ABIABI:AkademIndex/2014.article.000178

4. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

   A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

   MaqolaSemiconductor materials and interfacesSemiconductors20184 iqtibos

   ABIABI:AkademIndex/2026.other.467166

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.540063

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.540064