Ushbu ishga iqtibos qilgan ishlar

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Ish: Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

1. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   MaqolaOAOchiq kirishSemiconductor materials and interfacesPhysical Sciences and Technology20243 iqtibos

   ABIABI:AkademIndex/2024.article.001804

2. Silicon with Binary GexSi1 – x Compounds

   Н. Ф. Зикриллаев, K. S. Ayupov, N. Narkulov +3

   MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20241 iqtibos

   ABIABI:AkademIndex/2024.article.002219

3. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

   Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

   MaqolaOAOchiq kirishMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 iqtibos

   ABIABI:AkademIndex/2024.article.003016

4. Silicon with Binary Compounds GexSi1-x

   N. F. Zikrillayev, K. S. Ayupov, N. Narkulov +3

   MaqolaOAOchiq kirish20240 iqtibos

   ABIABI:AkademIndex/2024.article.018663

5. Physical and Magnetic Properties of Silicon Doped with Impurity Germanium Atoms

   N. F. Zikrillayev, F. E. Urakova, A. Toshev +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.003073

6. The Influence of Impurity Nano- and Microclusters on the Photovoltaic and Electrophysical Properties of Silicon

   N. F. Zikrillaev, K. S. Ayupov, Kh. F. Zikrillaev +4

   MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20260 iqtibos

   ABIABI:AkademIndex/2026.article.009999

7. Obtaining Silicon Specimens with Different Crystallographic Orientations by Diffusion Doping with Manganese Atoms

   N. F. Zikrillaev, Х. М. Илиев, А. А. Сатторов +3

   Maqola20260 iqtibos

   ABIABI:AkademIndex/2026.article.053431