Ushbu ishga iqtibos qilgan ishlar

7 ta ish

Ish: Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

1. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

   Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20257 iqtibos

   ABIABI:AkademIndex/2025.article.001352

2. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

   Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20256 iqtibos

   ABIABI:AkademIndex/2025.article.001173

3. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

   J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos

   ABIABI:AkademIndex/2026.article.000556

4. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

   J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

   MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20264 iqtibos

   ABIABI:AkademIndex/2026.article.003469

5. Temperature Response Curve of Silicon Diode Temperature Sensors

   Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

   MaqolaOAOchiq kirishAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics20251 iqtibos

   ABIABI:AkademIndex/2025.article.009033

6. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

   Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

   MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20261 iqtibos

   ABIABI:AkademIndex/2026.article.002954

7. Fabrication and Electrical Transport Properties of Triple-Barrier GaAs-BASED M–p–n–M Structures

   Bahodir M. Abdukahhorov, O. A. Abdulkhaev, Damir Istamov +2

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.043966