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5 ta ish

Ish: Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

  1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos
    ABI

  2. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    MaqolaOchiq kirishMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics20241 iqtibos
    ABI

  3. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20241 iqtibos
    ABI

  4. Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon

    Н. Ф. Зикриллаев, M. M. Shoabdurakhimova, U. Kh. Kurbanova +2

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20240 iqtibos
    ABI

  5. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

    B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos
    ABI