Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

1. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

   A.S. Saidov, M. U. Kalanov, D. V. Saparov +4

   MaqolaOAOchiq kirishSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 iqtibos

   ABIABI:AkademIndex/2024.article.005519

2. Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

   A. Sh. Razzokov, V. V. Girzhon, I. Shtablavyi

   MaqolaSilicon Nanostructures and PhotoluminescenceVacuum20250 iqtibos

   ABIABI:AkademIndex/2025.article.008005

3. Growing Ge1-xSnx solid solutions on Ge, GaAs substrates

   A. Sh. Razzokov, M.A. Shonazarova, J.A. Razzakov

   MaqolaOAOchiq kirish20250 iqtibos

   ABIABI:AkademIndex/2025.article.068239

4. Growing Si–Si 1− x Ge x –(Ge 2 ) 1− y (GaAs) y structures in a single technological cycle

   Alijon S. Razzokov, С.И. Петрушенко, Mateusz Fijałkowski +1

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.093420