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Ish: Composition of Silicon Alloyed with Gallium and Phosphorus Atoms
Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x<a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mfenced open="(" close=")" separators="|"> <a:mrow> <a:mn>0</a:mn> <a:mo>≤</a:mo> <a:mi>x</a:mi> <a:mo>≤</a:mo> <a:mn>1</a:mn> </a:mrow> </a:mfenced> </a:math> Solid Solution, Grown on Si and GaP Substrates with the Crystallographic Orientation (111)
A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +5
MaqolaOchiq kirishSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202113 iqtibosABIMBE growth of GaP on a Si substrate
M. S. Sobolev, А. А. Лазаренко, E. V. Nikitina +3
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MaqolaSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 iqtibosABIGaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates
D. S. Abramkin, М. О. Петрушков, М. А. Putyato +5
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T. N. Zavaritskaya, A. Kvit, N. N. Melnik +1
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Markus Feifel, Thomas Rachow, Jan Benick +5
Maqola20152 iqtibosABIRaman Spectroscopy and Structure of Crystalline Gallium Phosphide Nanowires
Qihua Xiong, Rajeev Gupta, Kofi W. Adu +5
Maqola20032 iqtibosABIGallium Phosphide-on-Silicon Dioxide Photonic Devices
K. Schneider, Pol Welter, Yannick Baumgartner +3
Maqola20182 iqtibosABIИССЛЕДОВАНИЕ ПОВЕРХНОСТИ КРЕМНИЯ ИМПЛАНТИРОВАННОГО ИОНАМИ МЕДИ
Ш. Т. Хожиев, А А Ганиев, В. М. Ротштейн +3
Maqola20202 iqtibosABI