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10 ta ish

Ish: Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

  1. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20257 iqtibos
    ABI

  2. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20256 iqtibos
    ABI

  3. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos
    ABI

  4. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20264 iqtibos
    ABI

  5. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20261 iqtibos
    ABI

  6. Experimental and analytical investigation of incomplete ionization in p-Si/n-CdS heterojunctions at cryogenic temperatures

    J. Sh. Abdullayev, I.B. Sapaev

    MaqolaOchiq kirish20260 iqtibos
    ABI

  7. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

    M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

    MaqolaOchiq kirish20260 iqtibos
    ABI

  8. Finite Element Modeling of Scanning Speed Effects in Femtosecond Laser-Induced Graphene Fabrication

    Jurabek Sadullayev, Munisbek Akhmedov, Murodbek Vapayev +3

    MaqolaOchiq kirish20260 iqtibos
    ABI

  9. Incomplete Dopant Ionization Effects in GaN Optical Photovoltaic Converters Over 4–400 K for Space Solar Energy Applications

    D. A. Qalandarova, M.Sh. Ibragimova, U.G. Salayev +6

    MaqolaOchiq kirish20260 iqtibos
    ABI

  10. Modeling the Impact of Incomplete Dopant Ionization on Built in Potential and C–V Characteristics of GaN p–n Junctions: A SCAPS-1D Study

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +5

    MaqolaOchiq kirish20260 iqtibos
    ABI